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| Manufacturer Part | SI2323DDS-T1-GE3 |
|---|---|
| Manufacturer | Vishay / Siliconix |
| Description | MOSFET P-CH 20V 5.3A SOT-23 |
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Lifecycle: | New from this manufacturer. |
| Delivery: | DHL FedEx Ups TNT EMS |
| Payment | T/T Paypal Visa MoneyGram Western Union |
| DataSheet | SI2323DDS-T1-GE3 PDF |
| InStock | 1,897 |
|---|---|
| UnitPrice | $ 0.61000 |
SI2323DDS-T1-GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com
| Type | Description |
|---|---|
| Series: | TrenchFET® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20 V |
| Current - Continuous Drain (Id) @ 25°C: | 5.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 39mOhm @ 4.1A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 36 nC @ 8 V |
| Vgs (Max): | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1160 pF @ 10 V |
| FET Feature: | - |
| Power Dissipation (Max): | 960mW (Ta), 1.7W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.
We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.
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