APTM120DA30CT1G

APTM120DA30CT1G

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Manufacturer Part APTM120DA30CT1G
Manufacturer Roving Networks / Microchip Technology
Description MOSFET N-CH 1200V 31A SP1
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet APTM120DA30CT1G PDF

Availability

InStock 208,547
UnitPrice $ 64.83000

APTM120DA30CT1G Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

APTM120DA30CT1G Specifications

Type Description
Series:POWER MOS 8™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:560 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:14560 pF @ 25 V
FET Feature:-
Power Dissipation (Max):657W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SP1
Package / Case:SP1

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